MECHANISM AND CONSEQUENCES OF SURFACE RECONSTRUCTION ON THE CLEAVAGE FACES OF WURTZITE-STRUCTURE COMPOUND SEMICONDUCTORS

被引：26

作者：

DUKE, CB

WANG, YR

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1988年 / 6卷 / 03期

关键词：

D O I：

10.1116/1.575155

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：692 / 695

页数：4

共 13 条

[1] (110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS [J].

CHADI, DJ .

PHYSICAL REVIEW B, 1979, 19 (04) :2074-2082

[2] CALCULATION OF LOW-ENERGY-ELECTRON-DIFFRACTION INTENSITIES FROM ZNO (1010) .2. INFLUENCE OF CALCULATIONAL PROCEDURE, MODEL POTENTIAL, AND 2ND-LAYER STRUCTURAL DISTORTIONS [J].

DUKE, CB ;

MEYER, RJ ;

PATON, A ;

MARK, P .

PHYSICAL REVIEW B, 1978, 18 (08) :4225-4240

[3]

DUKE CB, 1987, SURFACE PROPERTIES E, pCH3

[4] ELECTRONIC-STRUCTURE OF IDEAL AND RELAXED SURFACES OF ZNO - A PROTOTYPE IONIC WURTZITE SEMICONDUCTOR AND ITS SURFACE-PROPERTIES [J].

IVANOV, I ;

POLLMANN, J .

PHYSICAL REVIEW B, 1981, 24 (12) :7275-7296

[5] SEMICONDUCTOR SURFACE STRUCTURES [J].

Kahn, A. .

SURFACE SCIENCE REPORTS, 1983, 3 (4-5) :193-300

[6] TOTAL VALENCE-BAND DENSITIES OF STATES OF III-V AND II-VI COMPOUNDS FROM X-RAY PHOTOEMISSION SPECTROSCOPY [J].

LEY, L ;

POLLAK, RA ;

MCFEELY, FR ;

KOWALCZY.SP ;

SHIRLEY, DA .

PHYSICAL REVIEW B, 1974, 9 (02) :600-621

[7] CALCULATION OF THE ATOMIC GEOMETRIES OF THE (110) SURFACES OF III-V COMPOUND SEMICONDUCTORS [J].

MAILHIOT, C ;

DUKE, CB ;

CHADI, DJ .

SURFACE SCIENCE, 1985, 149 (2-3) :366-380

[8]

Mark P., 1975, Critical Reviews in Solid State Sciences, V5, P189, DOI 10.1080/10408437508243480

[9]

WANG Y, IN PRESS SURF SCI

[10]

WANG Y, IN PRESS PHYS REV B

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