EFFECT OF P-BASE SHEET AND CONTACT RESISTANCES ON STATIC CURRENT VOLTAGE CHARACTERISTICS OF SCALED LOW-VOLTAGE VERTICAL POWER DMOSFETS

被引：10
作者：
SHENAI, K [1 ]
机构：
[1] GE,CTR CORP RES & DEV,SCHENECTADY,NY 12301
来源：
IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 06期
关键词：
D O I：
10.1109/55.82057
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It is shown that a kink in the output current-voltage characteristics of vertical power DMOSFET's can result from high p-base sheet and contact resistances. This effect is prominent in scaled device structures fabricated using selectively formed TiSi2 source contacts. Electrical measurements indicated that this effect vanishes at higher operating temperatures.
引用
收藏
页码：270 / 272
页数：3
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