STIMULATED PHOTO LUMINESCENCE OF ZNSE GROWN BY VAPOR-PHASE EPITAXY

被引：0

作者：

TIAN, H ^{[1
]}

FAN, XW ^{[1
]}

XU, XR ^{[1
]}

机构：

[1] TIANJING INST TECHNOL,TIANJIN,PEOPLES R CHINA

来源：

JOURNAL OF LUMINESCENCE | 1990年 / 45卷 / 1-6期

关键词：

D O I：

10.1016/0022-2313(90)90149-6

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper we report stimulated emission in ZnSe epilayers under a nitrogen laser excitation. The ZnSe epilayers were grown by vapor phase epitaxy on n-GaAs substrates. The optical gain of the ZnSe epilayers was measured according to the method of Shaklee et al. in Phys. Rev. Lett. 26 (1971) 888. The stimulated emission spectra of the ZnSe epilayers at various excitation intensities were measured. The spectrum at high excitation intensity shows a dominant P band. The exciton-exciton (Ex-Ex) inelastic collision process is the dominant gain mechanism in the ZnSe epilayers at 64 K. © 1990.

引用

页码：215 / 217

页数：3