REDUCED DAMAGE GENERATION IN GAAS IMPLANTED WITH FOCUSED BE IONS

被引：8

作者：

BAMBA, Y

MIYAUCHI, E

ARIMOTO, H

TAKAMORI, A

HASHIMOTO, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 07期

关键词：

D O I：

10.1143/JJAP.23.L515

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L515 / L517

页数：3

共 15 条

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[2] FOCUSED SI ION-IMPLANTATION IN GAAS [J].

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HASHIMOTO, H .

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[3]

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[4]

CHATTERJEE PK, 1976, THESIS U ILLINOIS

[5]

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[6]

HARRIS JS, 1971, 2ND P INT C ION IMPL, P157

[7] HIGH-CURRENT DENSITY GA+ IMPLANTATIONS INTO SI [J].

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ANDERSON, CL ;

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WANG, V .

APPLIED PHYSICS LETTERS, 1979, 35 (11) :865-867

[8]

Hayashi I., 1980, Journal of the Physical Society of Japan, V49, P57

[9] RECOMBINATION-ENHANCED ANNEALING OF E1 AND E2 DEFECT LEVELS IN 1-MEV-ELECTRON-IRRADIATED N-GAAS [J].

LANG, DV ;

KIMERLING, LC ;

LEUNG, SY .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) :3587-3591

[10] LATERAL SPREADS OF BE AND SI IN GAAS IMPLANTED WITH A MASKLESS ION-IMPLANTATION SYSTEM [J].

MIYAUCHI, E ;

ARIMOTO, H ;

BAMBA, Y ;

TAKAMORI, A ;

HASHIMOTO, H ;

UTSUMI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07) :L423-L425

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