ROLE OF OXYGEN IN COPPER PRECIPITATION AT OXIDATION STACKING-FAULTS IN SILICON

被引：0

作者：

CORREIA, A ^{[1
]}

BALLUTAUD, D ^{[1
]}

MAURICE, JL ^{[1
]}

机构：

[1] CNRS,PHYS MAT LAB,F-92195 MEUDON,FRANCE

来源：

MICROSCOPY OF SEMICONDUCTING MATERIALS 1993 | 1993年 / 134期

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中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thermal oxidation of Czochralski (Cz) and floating zone (FZ) silicon was carried out in a copper contaminated environment. In the Cz case, large copper precipitate colonies appeared in {110} (mainly) and {100} planes, nucleated at oxygen-containing clouds decorating the Frank partial dislocations bounding oxidation induced stacking faults (OSF). In the FZ samples, copper precipitated directly on these dislocations, which were in contrast free of oxygen, creating small colonies in the OSF {111} planes.

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页码：125 / 128

页数：4

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