COMPUTER-SIMULATION OF CDTE CRYSTAL-GROWTH AND APPLICATION

被引：2
|
作者：
STEER, C
HAGEALI, M
KOEBEL, JM
SIFFERT, P
机构：
[1] CNRS Phase, F-67037 Strasbourg Cedex
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 16卷 / 1-3期
关键词：
D O I：
10.1016/0921-5107(93)90011-B
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In a step towards intelligent material processing, we studied the effect of the temperature distribution in the growth ampoule on the crystallization process. We constructed a mathematical model to calculate the temperature distribution in the sample, using the temperature profile in the furnace. In the experimental part, this profile was accurately imposed by our modified vertical Bridgman furnace with 12 independent zones. This equipment was applied to pure CdTe, which is known to be a difficult material with which to achieve large single crystal growth. After optimization of the temperature profile and the other growth parameters, we grew several large single crystals.
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页码：48 / 50
页数：3
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