MOVPE OF NARROW GAP II-VI-COMPOUNDS

被引：30

作者：

MULLIN, JB

IRVINE, SJC

TUNNICLIFFE, J

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 68卷 / 01期

关键词：

D O I：

10.1016/0022-0248(84)90419-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：214 / 222

页数：9

共 22 条

[1] IMPLEMENTATION OF A COMPUTER-CONTROLLED MOVPE SYSTEM TO GROW EPITAXIAL CMT [J].

BEVAN, MJ ;

WOODHOUSE, KT .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :254-261

[2]

BHAT I, J ELECTROCHEM SOC

[3]

CZERNIAK MR, 1984, J CRYST GROWTH, V68, P128, DOI 10.1016/0022-0248(84)90407-X

[4] METAL-ORGANIC VAPOR-DEPOSITION OF CDTE AND HGCDTE FILMS [J].

HOKE, WE ;

TRACZEWSKI, R .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5087-5089

[5] EPITAXIAL-GROWTH OF HGTE BY A MOVPE PROCESS [J].

IRVINE, SJC ;

MULLIN, JB ;

ROYLE, A .

JOURNAL OF CRYSTAL GROWTH, 1982, 57 (01) :15-20

[6] A STUDY OF TRANSPORT AND PYROLYSIS IN THE GROWTH OF CDXHG1-XTE BY MOVPE [J].

IRVINE, SJC ;

TUNNICLIFFE, J ;

MULLIN, JB .

JOURNAL OF CRYSTAL GROWTH, 1983, 65 (1-3) :479-484

[7] PHOTOSENSITIZATION - A STIMULANT FOR THE LOW-TEMPERATURE GROWTH OF EPITAXIAL HGTE [J].

IRVINE, SJC ;

MULLIN, JB ;

TUNNICLIFFE, J .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :188-193

[8] THE GROWTH BY MOVPE AND CHARACTERIZATION OF CDXHG1-XTE [J].

IRVINE, SJC ;

MULLIN, JB .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :107-115

[9] A STUDY OF THE GROWTH OF HGTE FROM THE VAPOR [J].

IRVINE, SJC ;

MULLIN, JB .

JOURNAL OF CRYSTAL GROWTH, 1981, 53 (03) :458-468

[10] DEFECT STRUCTURE OF CDTE [J].

KROGER, FA .

REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02) :205-210

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