FOCUSED BORON ION-BEAM IMPLANTATION INTO SILICON

被引：7

作者：

TAMURA, M

SHUKURI, S

ICHIKAWA, M

WADA, Y

ISHITANI, T

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1985年 / 7-8卷 / MAR期

关键词：

D O I：

10.1016/0168-583X(85)90483-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：858 / 863

页数：6

共 14 条

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[2]

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[4]

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[8] MASS-SEPARATED MICROBEAM SYSTEM WITH A LIQUID-METAL-ION SOURCE [J].

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UMEMURA, K ;

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[9]

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[10] FORMATION OF AMORPHOUS SILICON BY ION-BOMBARDMENT AS A FUNCTION OF ION, TEMPERATURE, AND DOSE [J].

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