EPITAXIAL-GROWTH AND CHARACTERIZATION OF BETA-SIC THIN-FILMS

被引：196

作者：

LIAW, P ^{[1
]}

DAVIS, RF ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV, DEPT MAT ENGN, RALEIGH, NC 27695 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 03期

关键词：

D O I：

10.1149/1.2113921

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：642 / 648

页数：7

共 33 条

[1] BUFFER-LAYER TECHNIQUE FOR THE GROWTH OF SINGLE-CRYSTAL SIC ON SI [J].

ADDAMIANO, A ;

SPRAGUE, JA .

APPLIED PHYSICS LETTERS, 1984, 44 (05) :525-527

[2]

Air Force Cambridge Research Laboratories (U.S.)

[3]

University of South Carolina in: Silicon Carbide, 1974, SILICON CARBIDE 1973

[4]

BERMAN HS, 1974, SILICON CARBIDE, P500

[5]

BLAKE LH, 1970, SOLID STATE TECHNOL, V13, P42

[6]

FAUST JW, 1974, SILICON CARBIDE 1973, P668

[7] HIGH-FIELD TRANSPORT IN WIDE-BAND-GAP SEMICONDUCTORS [J].

FERRY, DK .

PHYSICAL REVIEW B, 1975, 12 (06) :2361-2369

[8] GROWTH MECHANISM OF POLYCRYSTALLINE BETA-SIC LAYERS ON SILICON SUBSTRATE [J].

GRAUL, J ;

WAGNER, E .

APPLIED PHYSICS LETTERS, 1972, 21 (02) :67-&

[9]

Henisch H. K, 1969, SILICON CARBIDE 1968

[10] SITE EFFECT ON THE IMPURITY LEVELS IN H-4, 6H, AND 15R SIC [J].

IKEDA, M ;

MATSUNAMI, H ;

TANAKA, T .

PHYSICAL REVIEW B, 1980, 22 (06) :2842-2854

← 1 2 3 4 →