ELECTRON-BEAM LITHOGRAPHY USING VECTOR-SCAN TECHNIQUES

被引：27

作者：

SPETH, AJ ^{[1
]}

WILSON, AD ^{[1
]}

KERN, A ^{[1
]}

CHANG, THP ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1975年 / 12卷 / 06期

关键词：

D O I：

10.1116/1.568505

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1235 / 1239

页数：5

共 14 条

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[2]

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[4] PROXIMITY EFFECT IN ELECTRON-BEAM LITHOGRAPHY [J].

CHANG, THP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06) :1271-1275

[5]

CHANG THP, 1974, 6TH P INT C EL ION B, P205

[6]

GREENEICH JS, 1974, J APPL PHYS, V10, P5264

[7] EBES - PRACTICAL ELECTRON LITHOGRAPHIC SYSTEM [J].

HERRIOTT, DR ;

COLLIER, RJ ;

ALLES, DS ;

STAFFORD, JW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (07) :385-392

[8]

KYSER DF, 1974, 6TH P INT C EL ION B, P205

[9] NEW IMAGING AND DEFLECTION CONCEPT FOR PROBE-FORMING MICROFABRICATION SYSTEMS [J].

PFEIFFER, HC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06) :1170-1173

[10]

TING CH, 1975, J VAC SCI TECHNOL, V12, P1276

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