AMORPHOUS GAP PRODUCED BY ION-IMPLANTATION

被引：27

作者：

SHIMADA, T ^{[1
]}

KATO, Y ^{[1
]}

SHIRAKI, Y ^{[1
]}

KOMATSUBARA, KF ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO,JAPAN

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1976年 / 37卷 / 03期

关键词：

D O I：

10.1016/0022-3697(76)90092-5

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：305 / 313

页数：9

共 13 条

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[4] SENSITIVE TECHNIQUE FOR STUDYING ION-IMPLANTATION DAMAGE [J].

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[6]

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[7] ELECTRICAL-CONDUCTIVITY OF DISORDERED LAYERS IN GAAS CRYSTAL PRODUCED BY ION-IMPLANTATION [J].

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KOMATSUB.KF .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) :1044-1049

[8]

MATSUMORI T, 1974, P INT C ION IMPLANTA

[9]

MOTT NF, 1971, ELECTRONIC PROCESSES

[10]

Polk D. E., 1971, Journal of Non-Crystalline Solids, V5, P365, DOI 10.1016/0022-3093(71)90038-X

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