DETERMINATION OF CARRIER LIFETIME IN SI BY OPTICAL MODULATION

被引：20

作者：

POLLA, DL ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,ELECTR RES LAB,BERKELEY,CA 94720

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 06期

关键词：

D O I：

10.1109/EDL.1983.25698

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：185 / 187

页数：3

共 9 条

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[4] OBSERVATION OF DEEP LEVELS IN HG1-XCDXTE WITH OPTICAL MODULATION SPECTROSCOPY [J].

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AGGARWAL, RL ;

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[5]

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[6] SILICON OPTICAL CONSTANTS IN INFRARED [J].

SCHUMANN, PA ;

KEENAN, WA ;

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SCHNEIDER, CP .

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[7] MEASUREMENT OF MINORITY CARRIER LIFETIME IN GERMANIUM [J].

VALDES, LB .

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[8]

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[9]

5 STANF U PROC ENG M

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