ROLE OF CORRELATIONS IN (GASB)1-XGE2X ALLOYS

被引：43
作者：
GU, BL
NEWMAN, KE
FEDDERS, PA
机构：
[1] UNIV NOTRE DAME,DEPT PHYS,NOTRE DAME,IN 46556
[2] WASHINGTON UNIV,DEPT PHYS,ST LOUIS,MO 63130
来源：
PHYSICAL REVIEW B | 1987年 / 35卷 / 17期
关键词：
D O I：
10.1103/PhysRevB.35.9135
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：9135 / 9148
页数：14
相关论文
共 41 条
[1]  
ALFEROV ZI, 1982, SOV PHYS SEMICOND+, V16, P567
[2]  
[Anonymous], ELECTRONIC STRUCTURE
[3]   GROWTH AND OPTICAL-PROPERTIES OF SINGLE-CRYSTAL METASTABLE (GAAS)1-XGEX ALLOYS [J].
BARNETT, SA ;
RAY, MA ;
LASTRAS, A ;
KRAMER, B ;
GREENE, JE ;
RACCAH, PM ;
ABELS, LL .
ELECTRONICS LETTERS, 1982, 18 (20) :891-892
[4]  
BARNETT SA, 1984, LAYERED STRUCTURES E
[5]  
BESERMAN R, 1985, 17TH P INT C PHYS SE, P961
[6]   ISING MODEL FOR LAMBDA TRANSITION AND PHASE SEPARATION IN HE-3-HE-4 MIXTURES [J].
BLUME, M ;
EMERGY, VJ ;
GRIFFITHS, RB .
PHYSICAL REVIEW A-GENERAL PHYSICS, 1971, 4 (03) :1071-+
[7]  
BUNKER BA, 1984, EXAFS NEAR EDGE STRU, V3, P482
[8]   GROWTH OF SINGLE-CRYSTAL METASTABLE SEMICONDUCTING (GASB)1-XGEX FILMS [J].
CADIEN, KC ;
ELTOUKHY, AH ;
GREENE, JE .
APPLIED PHYSICS LETTERS, 1981, 38 (10) :773-775
[9]   MAXIMUM-ENTROPY METHOD FOR ELECTRONIC-PROPERTIES OF ALLOYS [J].
CARLSSON, AE ;
FEDDERS, PA .
PHYSICAL REVIEW B, 1986, 34 (06) :3567-3571
[10]   PROPERTIES OF (GAAS)1-XGE2X AND (GASB)1-XGE2X - CONSEQUENCES OF A STOCHASTIC GROWTH-PROCESS [J].
DAVIS, LC ;
HOLLOWAY, H .
PHYSICAL REVIEW B, 1987, 35 (06) :2767-2780
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