SUPERCONDUCTING YBACUO THIN-FILMS ON SILICON WITH BARIUM SILICATE BUFFER LAYERS

被引：2

作者：

BELOUSOV, IV ^{[1
]}

RUBAN, AI ^{[1
]}

ILCHENKO, VV ^{[1
]}

KUZNETSOV, GV ^{[1
]}

STRIKHA, VI ^{[1
]}

机构：

[1] KIEV TG SHEVCHENKO STATE UNIV,KIEV,UKRAINE

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1995年 / 5卷 / 02期

关键词：

D O I：

10.1109/77.402858

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The diffusion barrier capabilities of thin layers of barium silicate, which are determined by the interaction between the YBaCuO compound and Si substrate, have been investigated. Analysis of the films' elemental depth distributions show that their interaction with the substrates result in the formation of a Ba2SiO4 layer. The superconducting characteristic of YBaCuO films obtained on barium silicate, in terms of transition width and T-c0, are significantly improved compared to those without buffering.

引用

页码：1510 / 1512

页数：3

共 6 条

[1]

ILCHENKO VV, 1993, PHYSICS UKRAINE RADI, P125

[2] A REVIEW OF HIGH-TEMPERATURE SUPERCONDUCTING FILMS ON SILICON [J].