MICROWAVE SURFACE-RESISTANCE OF YBA2CU3O7-DELTA THIN-FILMS DEPOSITED BY PULSED ORGANOMETALLIC BEAM EPITAXY

被引：10
作者：
DEGROOT, DC
HOGAN, TP
KANNEWURF, CR
BUCHHOLZ, DB
CHANG, RPH
GAO, F
FENG, M
NORDIN, RA
机构：
[1] NORTHWESTERN UNIV,DEPT ELECT ENGN & COMP SCI,EVANSTON,IL 60208
[2] NORTHWESTERN UNIV,DEPT MAT SCI & ENGN,EVANSTON,IL 60208
[3] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801
[4] AT&T BELL LABS,NAPERVILLE,IL 60566
来源：
PHYSICA C | 1994年 / 222卷 / 3-4期
关键词：
D O I：
10.1016/0921-4534(94)90543-6
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The microwave surface resistance of superconducting YBa2Cu3O7-delta thin films deposited by pulsed organometallic beam epitaxy (POMBE) has been characterized using the parallel plate transmission line resonator method. POMBE is an advanced organometallic chemical vapor deposition technique where precursor vapors are precisely metered onto the substrate under computer control. In this study, the POMBE reactor was used to deposit epitaxial films of varying thicknesses onto LaAlO3 substrates. The deposition procedure and surface-resistance results for films of varying thicknesses are described. The reduction of surface resistance achieved supports the use of the POMBE technique as a possible method for preparing device-quality high-T(c) films and multi-layer structures.
引用
收藏
页码：271 / 277
页数：7
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