IMPLANTATION IN THE 1990S

被引：1
|
作者：
SEIDEL, TE
机构：
[1] SEMATECH, Austin, TX 78741
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 55卷 / 1-4期
关键词：
D O I：
10.1016/0168-583X(91)96127-7
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Requirements for implantation in the 1990s are being driven by both core and specialized processes. A review of these requirements includes difficult topography for deep-submicron MOS transistor structures (shadowing effects) and trench side-wall doping. The usual requirements on gate oxide integrity, contamination and high throughputs are to be maintained or improved. Equipment reliability and operational characteristics (source life) are being driven to more advanced performance levels.
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页码：17 / 19
页数：3
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