THERMOELECTRIC-POWER OF SI-AS-TE AND GE-AS-TE GLASSES

被引：16

作者：

TOHGE, N ^{[1
]}

MINAMI, T ^{[1
]}

TANAKA, M ^{[1
]}

机构：

[1] UNIV OSAKA,COLL ENGN,DEPT APPL CHEM,SAKAI,OSAKA 591,JAPAN

来源：

关键词：

D O I：

10.1143/JJAP.16.977

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：977 / 979

页数：3

共 10 条

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[2]

Minami T., 1970, Journal of Non-Crystalline Solids, V3, P327, DOI 10.1016/0022-3093(70)90003-7

[3]

MINAMI T, 1974, 10TH P INT C GLASS K, P91

[4]

MINAMI T, 1969, YOGYO KYOKAI SHI, V77, P372

[5]

MINAMI T, 1970, YOGYO KYOKAI SHI, V78, P299

[6]

MOTT NF, 1971, ELECTRONIC PROCESSES, P219

[7] DC ELECTRONIC TRANSPORT IN BINARY ARSENIC CHALCOGENIDE GLASSES [J].

SEAGER, CH ;

QUINN, RK .

SEAGER, CH ;

EMIN, D ;

QUINN, RK .

PHYSICAL REVIEW B, 1973, 8 (10) :4746-4760

[9]

SMITH RA, 1968, SEMICONDUCTORS, pCH6

[10]

Strunk R., 1973, Journal of Non-Crystalline Solids, V12, P168, DOI 10.1016/0022-3093(73)90066-5