A NOVEL METHOD OF SELECTIVE SIO2 FORMATION ON MO ELECTRODES

被引：0

作者：

KYURAGI, H

OIKAWA, H

机构：

[1] NTT, Atsugi Electrical Communication, Lab, Atsugi, Jpn, NTT, Atsugi Electrical Communication Lab, Atsugi, Jpn

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 02期

关键词：

Compendex;

D O I：

10.1116/1.582931

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：130 / 134

页数：5

共 12 条

[1] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&

[2] PHOSPHORUS-DOPED MOLYBDENUM SILICIDE FILMS FOR LSI APPLICATIONS [J].

INOUE, S ;

TOYOKURA, N ;

NAKAMURA, T ;

ISHIKAWA, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (11) :2402-2410

[3]

ISHIKAWA H, 1979, 1979 IEDM TECH DIG, P358

[4]

KILLEFFER DH, 1952, MOLYBDENUM COMPOUNDS, P32

[5]

KONDO M, 1978 IEEE ISSCC C P

[6]

MIZUTANI Y, 1980, 12TH P C SOL STAT DE, P117

[7]

MIZUTANI Y, 1981, JPN J APPL PHYS, V20

[8]

MURARKA SP, 1979, 1979 INT EL DEV M IE, P454

[9]

OIKAWA H, 1982, 1982 INT EL DEV M IE, P564

[10] REFRACTORY-METAL GATE PROCESSES FOR VLSI APPLICATIONS [J].

SHAH, PL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :631-640

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