INVESTIGATION OF SILICON CARBIDE POLYTYPES BY RAMAN SPECTROSCOPY

被引：20

作者：

Chikvaidze, G. ^{[1
]}

Mironova-Ulmane, N. ^{[1
]}

Plaude, A. ^{[1
]}

Sergeev, O. ^{[2
]}

机构：

[1] Univ Latvia, Inst Solid State Phys, 8 Kengaraga Str, LV-1063 Riga, Latvia

[2] Natl Acad Sci Ukraine, VE Lashkaryov Inst Semicond Phys, UA-03028 Kiev, Ukraine

来源：

LATVIAN JOURNAL OF PHYSICS AND TECHNICAL SCIENCES | 2014年 / 51卷 / 03期

关键词：

Silicon carbide (SiC); polytypes; Raman spectroscopy; X-ray diffraction (XRD);

D O I：

10.2478/lpts-2014-0019

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polytypes of colourless and coloured single crystals of silicon carbide (SiC) grown on SiC substrates by chemical vapour deposition are studied using Raman spectroscopy supplemented by scanning electron microscopy (SEM) and X-ray diffraction (XRD) analyses. The SEM analysis of the defect stacking faults, inclusions of defects and their distribution has shown that they correlate with the peak positions of the obtained Raman spectra and with the XRD data on the crystal structure.

引用

页码：51 / 57

页数：7

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