THE MELTING BEHAVIOR OF SMALL SILICON CLUSTERS

被引：12

作者：

DINDA, PT

VLASTOUTSINGANOS, G

FLYTZANIS, N

MISTRIOTIS, AD

机构：

[1] UNIV BOURGOGNE, PHYS LAB, 6 BLVD GABRIEL, F-21000 DIJON, FRANCE

[2] UNIV CRETE, DEPT PHYS, GR-71409 IRAKLION, GREECE

[3] RES CTR CRETE, GR-71110 IRAKLION, GREECE

来源：

PHYSICS LETTERS A | 1994年 / 191卷 / 3-4期

关键词：

D O I：

10.1016/0375-9601(94)90149-X

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report an analysis of the melting behaviour of small silicon clusters interacting via a nonlinear interatomic potential with four-body terms. The analysis shows, by means of Monte Carlo and molecular dynamics simulations, that the small silicon clusters undergo, in a vacuum, structural changes from a solid rigid state to a liquid-like state. The melting temperature exhibits a strong variation with cluster size.

引用

页码：339 / 345

页数：7

共 15 条

[1] THE ONSET OF NONRIGID DYNAMICS AND THE MELTING TRANSITION IN AR-7 [J].