IMPROVED SIGNAL-TO-NOISE RATIO IN GAIN-LEVERED INGAAS INP MQW LASERS

被引：8

作者：

SELTZER, CP

WESTBROOK, LD

WICKES, HJ

机构：

[1] BT Laboratories, Martlesham Heath, Ipswich

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 02期

关键词：

LASERS; SEMICONDUCTOR LASERS;

D O I：

10.1049/el:19930158

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The gain-lever effect is demonstrated in long wavelength InGaAs/InP quantum well lasers for the first time. Preliminary measurements show an improvement in amplitude modulation efficiency of 10 dB at 900 MHz. Relative intensity noise increases by just 2.5 dB yielding a signal-to-noise ratio improvement of 7.5 dB.

引用

页码：230 / 231

页数：2

共 5 条

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COX, CH
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[2] GAJIC D, 1990, APPL PHYS LETT, V57, P1837, DOI 10.1063/1.104032
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[4] RESONANCE FREQUENCY, DAMPING, AND DIFFERENTIAL GAIN IN 1.5 MU-M MULTIPLE QUANTUM-WELL LASERS
TATHAM, MC
LEALMAN, IF
SELTZER, CP
WESTBROOK, LD
COOPER, DM
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (02) : 408 - 414
[5] THE OPTICAL GAIN LEVER - A NOVEL GAIN MECHANISM IN THE DIRECT MODULATION OF QUANTUM WELL SEMICONDUCTOR-LASERS
VAHALA, KJ
NEWKIRK, MA
CHEN, TR
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (25) : 2506 - 2508

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