CAPACITANCE-VOLTAGE CHARACTERISTICS OF GAAS-ALAS HETEROSTRUCTURES

被引：11

作者：

WOODWARD, TK ^{[1
]}

SCHLESINGER, TE ^{[1
]}

MCGILL, TC ^{[1
]}

BURNHAM, RD ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 06期

关键词：

D O I：

10.1063/1.96040

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：631 / 633

页数：3

共 8 条

[1] DETERMINATION OF THE VALENCE-BAND DISCONTINUITY BETWEEN GAAS AND (AL,GA)AS BY THE USE OF P+-GAAS-(AL,GA)AS-P--GAAS CAPACITORS [J].

ARNOLD, D ;

KETTERSON, A ;

HENDERSON, T ;

KLEM, J ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1984, 45 (11) :1237-1239

[2] INVESTIGATION OF HETEROJUNCTIONS FOR MIS DEVICES WITH OXYGEN-DOPED ALXGA1-XAS ON N-TYPE GAAS [J].

CASEY, HC ;

CHO, AY ;

LANG, DV ;

NICOLLIAN, EH ;

FOY, PW .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3484-3491

[3] CURRENT-VOLTAGE AND CAPACITANCE-VOLTAGE CHARACTERISTICS OF A METAL/AL0.5GA0.5AS/GAAS CAPACITOR [J].

DRUMMOND, TJ ;

FISCHER, R ;

ARNOLD, D ;

MORKOC, H ;

SHUR, MS .

APPLIED PHYSICS LETTERS, 1984, 44 (02) :214-216

[4] ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1977, 31 (07) :466-468

[5] INFLUENCE OF DEBYE LENGTH ON C-V MEASUREMENTS OF DOPING PROFILES [J].

JOHNSON, WC ;

PANOUSIS, PT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) :965-&

[6] MEASUREMENT OF ISOTYPE HETEROJUNCTION BARRIERS BY C-V PROFILING [J].

KROEMER, H ;

CHIEN, WY ;

HARRIS, JS ;

EDWALL, DD .

APPLIED PHYSICS LETTERS, 1980, 36 (04) :295-297

[7] SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES [J].

MANASEVIT, HM .

APPLIED PHYSICS LETTERS, 1968, 12 (04) :156-+

[8] ELECTRICAL MEASUREMENTS ON N+-GAAS-UNDOPED GA0.6AL0.4AS-N-GAAS CAPACITORS [J].

SOLOMON, PM ;

HICKMOTT, TW ;

MORKOC, H ;

FISCHER, R .

APPLIED PHYSICS LETTERS, 1983, 42 (09) :821-823

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