Nano-Structure Control of SiC Hollow Fiber Prepared from Polycarbosilane

SiC hollow fiber was fabricated by curing, dissolution and sintering of Al-PCS fiber, which was melt spun the poly-aluminocarbosilane. Al-PCS fiber was thermally oxidized and dissolved in toluene to remove the unoxidized area, the core of the cured fiber. The wall thickness (t(wall)) of Al-PCS fiber was monotonically increased with an increasing oxidation curing time. The Al-PCS hollow fiber was heat-treated at the temperature between 1200 and 2000 degrees C to make a SiC hollow fibers having porous structure on the fiber wall. The pore size of the fiber wall was increased with the sintering temperature due to the decomposition of the amorphous SiCxOy matrix and the growth of beta-SiC in the matrix. At 1400 degrees C, a nano porous wall with a high specific surface area was obtained. However, nano pores grew with the grain growth after the thermal decomposition of the amorphous matrix. This type of SiC hollow fibers are expected to be used as a substrate for a gas separation membrane.