CAPTURE INTO DEEP ELECTRONIC STATES IN SEMICONDUCTORS

被引：26
作者：
MORGAN, TN
机构：
来源：
PHYSICAL REVIEW B | 1983年 / 28卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.28.7141
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：7141 / 7174
页数：34
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