SUBSTRATE-POLARITY DEPENDENCE OF METAL-ORGANIC VAPOR-PHASE EPITAXY-GROWN GAN ON SIC

[1] DEPENDENCE OF GROWTH PROPERTIES OF SILICON-DOPED GAAS EPITAXIAL LAYERS UPON ORIENTATION [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4512 - &

[2] ANGULAR-DEPENDENT X-RAY PHOTOEMISSION-STUDY ON THE SURFACES OF GAAS (111) AND (111) SINGLE-CRYSTALS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 53 (01): : K1 - K4

[3] GALLIUM NITRIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (07) : 1200 - &

[4] ABSORPTION, REFLECTANCE, AND LUMINESCENCE OF GAN EXPITAXIAL LAYERS [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (04): : 1211 - +

[5] STIMULATED EMISSION AND LASER ACTION IN GALLIUM NITRIDE [J]. APPLIED PHYSICS LETTERS, 1971, 19 (01) : 5 - +

[6] Duffy M. T., 1973, Journal of Electronic Materials, V2, P359, DOI 10.1007/BF02666163

[7] DIRECT OBSERVATION OF THE COMPOSITION OF A AND B (111) FACES OF GAP BY USING X-RAY PHOTOEMISSION [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) : 657 - 661

[8] GAN ELECTROLUMINESCENT DEVICES - PREPARATION AND STUDIES [J]. JOURNAL OF LUMINESCENCE, 1978, 17 (03) : 263 - 282

[9] PREPARATION AND STRUCTURAL PROPERTIES OF GAN THIN FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04): : 593 - &

[10] MECHANISM OF CARBON INCORPORATION IN MOCVD GAAS [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 148 - 156

[1] DEPENDENCE OF GROWTH PROPERTIES OF SILICON-DOPED GAAS EPITAXIAL LAYERS UPON ORIENTATION [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4512 - &

[2] ANGULAR-DEPENDENT X-RAY PHOTOEMISSION-STUDY ON THE SURFACES OF GAAS (111) AND (111) SINGLE-CRYSTALS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 53 (01): : K1 - K4

[3] GALLIUM NITRIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (07) : 1200 - &

[4] ABSORPTION, REFLECTANCE, AND LUMINESCENCE OF GAN EXPITAXIAL LAYERS [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (04): : 1211 - +

[5] STIMULATED EMISSION AND LASER ACTION IN GALLIUM NITRIDE [J]. APPLIED PHYSICS LETTERS, 1971, 19 (01) : 5 - +

[6] Duffy M. T., 1973, Journal of Electronic Materials, V2, P359, DOI 10.1007/BF02666163

[7] DIRECT OBSERVATION OF THE COMPOSITION OF A AND B (111) FACES OF GAP BY USING X-RAY PHOTOEMISSION [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) : 657 - 661

[8] GAN ELECTROLUMINESCENT DEVICES - PREPARATION AND STUDIES [J]. JOURNAL OF LUMINESCENCE, 1978, 17 (03) : 263 - 282

[9] PREPARATION AND STRUCTURAL PROPERTIES OF GAN THIN FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04): : 593 - &

[10] MECHANISM OF CARBON INCORPORATION IN MOCVD GAAS [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 148 - 156