Fracture of crystalline germanium during electrochemical lithium insertion
被引:50
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作者:
Lee, Seok Woo
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Stanford Univ, Geballe Lab Adv Mat, Stanford, CA 94305 USAStanford Univ, Geballe Lab Adv Mat, Stanford, CA 94305 USA
Lee, Seok Woo
[1
]
Ryu, Ill
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Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USAStanford Univ, Geballe Lab Adv Mat, Stanford, CA 94305 USA
Ryu, Ill
[2
]
Nix, William D.
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Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USAStanford Univ, Geballe Lab Adv Mat, Stanford, CA 94305 USA
Nix, William D.
[2
]
Cui, Yi
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Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
SLAC Natl Accelerator Lab, Stanford Inst Mat & Energy Sci, Menlo Pk, CA 94025 USAStanford Univ, Geballe Lab Adv Mat, Stanford, CA 94305 USA
Cui, Yi
[2
,3
]
机构:
[1] Stanford Univ, Geballe Lab Adv Mat, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
[3] SLAC Natl Accelerator Lab, Stanford Inst Mat & Energy Sci, Menlo Pk, CA 94025 USA
Germanium is one of the promising alloying anode (Si, Ge, Sn) materials for high capacity lithium ion batteries. Since it is isostructural with crystalline silicon, crystalline Ge is expected to show intriguing lithiation-induced phenomena similar to Si, such as anomalous volume expansion and fracture. Here, we present the study of lithiation of Ge micropillars, and we compare the findings to silicon pillar lithiation. The critical pillar diameter similar to 1.2 mu m associated with lithiation-induced fracture of. 111. Ge pillars, determined through our statistical investigation, is much greater than the critical dimension for fracture of. 111. silicon pillars (similar to 300 nm). This larger critical size for lithiation-induced fracture of Ge likely arises from lower tensile stress concentrations at the surface due to the more inherently isotropic expansion that Ge undergoes during lithiation. Upon lithiation, Ge displays only slight anisotropy in its volume expansion, with the. 110. directions exhibiting radial expansion that is only 1.1 times larger than that along. 111. directions. Despite its relatively weak anisotropy in volume expansion, however, Ge pillars above the critical dimension still show anisotropic fracture, with favored fracture sites residing between the. 110. directions on the pillar sidewall, similar to Si. We believe that this study provides better understanding of lithiation of Ge for designing high-density anode for Li-ion batteries. (C) 2015 Elsevier Ltd. All rights reserved.
机构:
Tokyo Univ Agr & Technol, Grad Sch Bioapplicat & Syst Engn BASE, 2-24-16,Naka Cho, Koganei, Tokyo 1848588, Japan
TUAT, Inst Global Innovat Res GIR, Tokyo, JapanUniv Ferrara, Dept Chem & Pharmaceut Sci, Via Fossato Mortara 17, I-44121 Ferrara, Italy
Tominaga, Yoichi
Hassoun, Jusef
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Univ Ferrara, Dept Chem & Pharmaceut Sci, Via Fossato Mortara 17, I-44121 Ferrara, Italy
TUAT, Inst Global Innovat Res GIR, Tokyo, Japan
Univ Ferrara, Res Unit, Natl Interuniv Consortium Mat Sci & Technol INSTM, Via Fossato Mortara,17, I-44121 Ferrara, ItalyUniv Ferrara, Dept Chem & Pharmaceut Sci, Via Fossato Mortara 17, I-44121 Ferrara, Italy
机构:
Univ Paris Est Creteil, Inst Chim & Mat Paris Est, GESMAT, CNRS,UMR 7182, 2 Rue Henri Dunant, F-94320 Thiais, FranceUniv Paris Est Creteil, Inst Chim & Mat Paris Est, GESMAT, CNRS,UMR 7182, 2 Rue Henri Dunant, F-94320 Thiais, France
Panabiere, E.
Emery, N.
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Univ Paris Est Creteil, Inst Chim & Mat Paris Est, GESMAT, CNRS,UMR 7182, 2 Rue Henri Dunant, F-94320 Thiais, FranceUniv Paris Est Creteil, Inst Chim & Mat Paris Est, GESMAT, CNRS,UMR 7182, 2 Rue Henri Dunant, F-94320 Thiais, France
Emery, N.
Bach, S.
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机构:
Univ Paris Est Creteil, Inst Chim & Mat Paris Est, GESMAT, CNRS,UMR 7182, 2 Rue Henri Dunant, F-94320 Thiais, France
Univ Evry Val dEssonne, Dept Chim, Bd Francois Mitterrand, F-91025 Evry, FranceUniv Paris Est Creteil, Inst Chim & Mat Paris Est, GESMAT, CNRS,UMR 7182, 2 Rue Henri Dunant, F-94320 Thiais, France
Bach, S.
Pereira-Ramos, J. -P.
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Univ Paris Est Creteil, Inst Chim & Mat Paris Est, GESMAT, CNRS,UMR 7182, 2 Rue Henri Dunant, F-94320 Thiais, FranceUniv Paris Est Creteil, Inst Chim & Mat Paris Est, GESMAT, CNRS,UMR 7182, 2 Rue Henri Dunant, F-94320 Thiais, France
Pereira-Ramos, J. -P.
Willmann, P.
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Ctr Natl Etud Spatiales, 18 Ave Edouard Belin, F-31401 Toulouse 9, FranceUniv Paris Est Creteil, Inst Chim & Mat Paris Est, GESMAT, CNRS,UMR 7182, 2 Rue Henri Dunant, F-94320 Thiais, France