EFFECT OF HYDROGEN DILUTION OF SILANE IN HYDROGENATED AMORPHOUS-SILICON FILMS PREPARED BY PHOTOCHEMICAL VAPOR-DEPOSITION

被引：9

作者：

KAMIMURA, T

HIROSE, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 12期

关键词：

D O I：

10.1143/JJAP.25.1778

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1778 / 1782

页数：5

共 12 条

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[6]

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[7] EFFECTS OF GROWTH-RATE ON THE MICROCRYSTALLINE CHARACTERISTICS OF PLASMA-DEPOSITED MU-C-SI-H [J].

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[8] HIGHLY CONDUCTIVE AND WIDE BAND-GAP AMORPHOUS-MICROCRYSTALLINE MIXED-PHASE SILICON FILMS PREPARED BY PHOTOCHEMICAL VAPOR-DEPOSITION [J].

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[9]

SAITOH T, 1982, JPN J APPL PHYS S221, V22, P617

[10] EFFECT OF HYDROGEN DILUTION OF SILANE ON OPTOELECTRONIC PROPERTIES IN GLOW-DISCHARGED HYDROGENATED SILICON FILMS [J].

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