共 50 条
- [45] A comparative study of point defect aggregates in high purity single crystals of silicon grown by the czochralski and the float zone methods SEMICONDUCTOR DEVICES, 1996, 2733 : 269 - 273
- [48] PHOSPHORUS DOPING OF FLOAT-ZONE SILICON BY THERMAL-NEUTRON IRRADIATION TRANSACTIONS OF THE AMERICAN NUCLEAR SOCIETY, 1977, 26 : 38 - 39
- [49] Nucleation of Nickel Disilicide Precipitates in Float-Zone Silicon: The Role of Vacancies PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2022, 219 (17):
- [50] ELECTRICAL-PROPERTIES OF DISLOCATIONS IN PLASTICALLY DEFORMED FLOAT-ZONE SILICON JOURNAL DE PHYSIQUE III, 1995, 5 (09): : 1327 - 1336