DEFECT STRUCTURE IN DISLOCATION - FREE SILICON CRYSTALS GROWN BY FLOAT-ZONE METHOD

被引：0
作者：
PLASKETT, TS
机构：
来源：
JOM-JOURNAL OF METALS | 1964年 / 16卷 / 01期
关键词：
D O I：
暂无
中图分类号：
TF [冶金工业];
学科分类号：
0806 ;
摘要：
引用
收藏
页码：105 / &
相关论文
共 50 条
  • [31] Study of ferromagnetism in Co-doped rutile powders and float-zone grown single crystals
    Koohpayeh, S. M.
    Fort, D.
    Bevan, A. I.
    Williams, A. J.
    Abell, J. S.
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2008, 320 (06) : 887 - 894
  • [32] The Lattice Spacing Variability of Intrinsic Float-Zone Silicon
    Kessler, Ernest G.
    Szabo, Csilla I.
    Cline, James P.
    Henins, Albert
    Hudson, Lawrence T.
    Mendenhall, Marcus H.
    Vaudin, Mark D.
    JOURNAL OF RESEARCH OF THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY, 2017, 122
  • [33] Modeling of the defect structure in dislocation-free silicon single crystals
    V. I. Talanin
    I. E. Talanin
    A. A. Voronin
    Crystallography Reports, 2008, 53 : 1124 - 1132
  • [34] Modeling of the Defect Structure in Dislocation-Free Silicon Single Crystals
    Talanin, V. I.
    Talanin, I. E.
    Voronin, A. A.
    CRYSTALLOGRAPHY REPORTS, 2008, 53 (07) : 1124 - 1132
  • [35] Float-zone silicon for high volume production of solar cells
    Vedde, J
    Clausen, T
    Jensen, L
    PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C, 2003, : 943 - 946
  • [36] MAXIMUM STABLE ZONE LENGTH IN FLOAT-ZONE GROWTH OF SMALL-DIAMETER SAPPHIRE AND SILICON-CRYSTALS
    KIM, KM
    DREEBEN, AB
    SCHUJKO, A
    JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4472 - 4474
  • [37] High-gain bipolar detector on float-zone silicon
    Han, DJ
    Batignani, G
    Del Guerra, A
    Dalla Betta, GF
    Boscardin, M
    Bosisio, L
    Giorgi, M
    Forti, F
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2003, 512 (03) : 572 - 577
  • [38] Industrial growth of large diameter float-zone silicon ingots
    Hensel, W
    PROCEEDINGS OF THE FOURTH INTERNATIONAL SYMPOSIUM ON HIGH PURITY SILICON, 1996, 96 (13): : 3 - 14
  • [39] The influence of growth rate on the microstructural and magnetic properties of float-zone grown ErFeO3 crystals
    Koohpayeh, S. M.
    Abell, J. S.
    Bamzai, K. K.
    Bevan, A. I.
    Fort, D.
    Williams, A. J.
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2007, 309 (01) : 119 - 125
  • [40] CASTING OF SILICON RODS FOR FLOAT-ZONE CRYSTAL-GROWTH
    FENZL, HJ
    ERDMANN, W
    MUHLBAUER, A
    WELTER, JM
    JOURNAL OF CRYSTAL GROWTH, 1984, 68 (03) : 771 - 775
12345