HYDROGEN PASSIVATION AND REACTIVATION OF SHALLOW ZN ACCEPTORS IN GAAS

被引：5
作者：
LEITCH, AWR [1 ]
PRESCHA, T [1 ]
STUTZMANN, M [1 ]
机构：
[1] UNIV PORT ELIZABETH,DEPT PHYS,PORT ELIZABETH 6000,SOUTH AFRICA
来源：
APPLIED SURFACE SCIENCE | 1991年 / 50卷 / 1-4期
关键词：
Heat Treatment - Annealing;
D O I：
10.1016/0169-4332(91)90204-W
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We report on a study of the hydrogenation of melt-grown Zn-doped GaAs, using a remote DC plasma system. Depth profiles of the free carrier concentration revealed the extent of passivation of the hydrogenated GaAs. Annealing at temperatures between 90 and 160-degrees-C for various times, with a reverse bias applied to the Schottky diode, allowed us to observe the reactivation of the Zn-acceptors in the high-field space-charge region of the diode. The thermal dissociation of the electrically neutral ZnH complex is found to obey first-order kinetics, with a dissociation energy E(ZnH) = 1.33 +/- 0.03 eV.
引用
收藏
页码：390 / 394
页数：5
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