INFRARED PHOTOCONDUCTIVITY OF A-SI-H IN THE PRESENCE OF ADDITIONAL INTERBAND ILLUMINATION

被引:0
作者
KUROVA, IA
ORMONT, NN
OMELYANOVSKII, EM
FUKSINA, SA
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1985年 / 19卷 / 01期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:25 / 27
页数:3
相关论文
共 10 条
[1]  
BRODSKY MH, 1979, AMORPHOUS SEMICONDUC
[2]  
Bube R.H., 1960, PHOTOCONDUCTIVITY SO
[3]   STUDY OF LIGHT-INDUCED-CHANGES IN A-SI-H BY DETAILED COMPUTER MODELING OF ADMITTANCE AND DLTS [J].
COHEN, JD ;
LANG, DV ;
HARBISON, JP ;
SERGENT, AM .
JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :371-374
[4]  
KUROVA IA, 1983, SOV PHYS SEMICOND+, V17, P971
[5]   NONEQUILIBRIUM STEADY-STATE STATISTICS AND ASSOCIATED EFFECTS FOR INSULATORS AND SEMICONDUCTORS CONTAINING AN ARBITRATY DISTRIBUTION OF TRAPS [J].
SIMMONS, JG ;
TAYLOR, GW .
PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (02) :502-&
[6]   PHOTOCONDUCTIVITY STUDIES OF THE MOBILITY EDGE IN AMORPHOUS-SILICON [J].
SPEAR, WE ;
ALANI, H ;
LECOMBER, PG .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (05) :781-796
[7]   INTERPRETATION OF TRANSPORT RESULTS IN AMORPHOUS-SILICON [J].
SPEAR, WE ;
ALLAN, D ;
LECOMBER, P ;
GHAITH, A .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :357-362
[8]   NEW FEATURES OF THE TEMPERATURE-DEPENDENCE OF PHOTOCONDUCTIVITY IN PLASMA-DEPOSITED HYDROGENATED AMORPHOUS-SILICON ALLOYS [J].
VANIER, PE ;
DELAHOY, AE ;
GRIFFITH, RW .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5235-5242
[9]  
VAVILOV VS, 1983, SOV PHYS SEMICOND+, V17, P829
[10]   PHOTOCONDUCTIVITY, TRAPPING, AND RECOMBINATION IN DISCHARGE-PRODUCED, HYDROGENATED AMORPHOUS-SILICON [J].
WRONSKI, CR ;
DANIEL, RE .
PHYSICAL REVIEW B, 1981, 23 (02) :794-804