EFFECT OF DOPING ON ELECTRON SPIN RESONANCE IN PHOSPHORUS DOPED SILICON .2.

被引：25

作者：

KODERA, H

机构：

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1966年 / 21卷 / 06期

关键词：

D O I：

10.1143/JPSJ.21.1040

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：1040 / &

相关论文

共 18 条

[1] CONDUCTIVITY MOBILITIES OF ELECTRONS AND HOLES IN HEAVILY DOPED SILICON [J].

BACKENSTOSS, G .

PHYSICAL REVIEW, 1957, 108 (06) :1416-1419

[2]

CRONEMEYER DC, 1957, PHYS REV, V105, P552

[3] THEORY OF THE EFFECT OF SPIN-ORBIT COUPLING ON MAGNETIC RESONANCE IN SOME SEMICONDUCTORS [J].

ELLIOTT, RJ .

PHYSICAL REVIEW, 1954, 96 (02) :266-279

[4]

JEROME D, 1964, PHYS REV, V134, P1001

[5] EFFECT OF DOPING ON ELECTRON SPIN RESONANCE IN PHOSPHORUS DOPED SILICON [J].

KODERA, H .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (06) :915-&

[6] EFFECT OF DOPING ON ELECTRON SPIN RESONANCEAIN PHOSPHORUS DOPED SILICON STUDIED AT LIQUID NITROGEN TEMPERATURE [J].

KODERA, H .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (09) :1751-&

[7] PARAMAGNETIC CENTERS PRODUCED AT SILICON SURFACE BY HEAT-TREATMENT IN ATMOSPHERE CONTAINING NO OXYGEN [J].

KUSUMOTO, H ;

SHOJI, M .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (10) :1678-&

[8]

LUDWIG GW, 1962, SOLID STATE PHYS, V13, P223

[9] INFRARED ABSORPTION OF SILICON NEAR THE LATTICE EDGE [J].

MACFARLANE, GG ;

ROBERTS, V .

PHYSICAL REVIEW, 1955, 98 (06) :1865-1866

[10] ELECTRON SPIN RESONANCE IN PHOSPHORUS DOPED SILICON AT LOW TEMPERATURES [J].

MAEKAWA, S ;

KINOSHIT.N .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1965, 20 (08) :1447-&