POLARIZATION-INSENSITIVE ELECTROABSORPTION IN STRAINED GAINAS/ALINAS QUANTUM-WELL STRUCTURES

被引：9

作者：

WAN, HW

CHONG, TC

CHUA, SJ

机构：

[1] Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, Singapore, 0511

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 01期

关键词：

D O I：

10.1109/68.265900

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The polarization-dependent electroabsorption in lattice-matched and strained GaInAs/AlInAs quantum well structures is studied using photocurrent spectral measurements. The results show that the application of a biaxial tensile strain by the appropriate selection of the Ga mole fraction and the well size reduces the difference between the transition energies of the heavy and light holes due to quantization, while a compressive strain further enhances the polarization dependence.

引用

页码：92 / 94

页数：3

共 16 条

[1] STRAINED-LAYER INGAAS INALAS MULTIPLE QUANTUM-WELLS FOR EFFICIENT OPTICAL WAVE-GUIDE MODULATION AT 1.55-MU-M [J].

BIGAN, E ;

ALLOVON, M ;

CARRE, M ;

CARENCO, A .

ELECTRONICS LETTERS, 1990, 26 (06) :355-357

[2] POLARIZATION-INDEPENDENT STRAINED INGAAS/INGAALAS QUANTUM-WELL PHASE MODULATORS [J].

CHEN, Y ;

ZUCKER, JE ;

SAUER, NJ ;

CHANG, TY .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (10) :1120-1123

[3] POLARIZATION DEPENDENCE OF FIELD-INDUCED REFRACTIVE-INDEX VARIATION IN STRAINED AND UNSTRAINED QUANTUM-WELL STRUCTURES [J].

CHONG, TC ;

WAN, HW ;

CHUA, SJ .

ELECTRONICS LETTERS, 1990, 26 (14) :1060-1061

[4] THEORETICAL GAIN OF STRAINED-LAYER SEMICONDUCTOR-LASERS IN THE LARGE STRAIN REGIME [J].

CHONG, TC ;

FONSTAD, CG .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (02) :171-178

[5] MIDINFRARED DETECTORS IN THE 3-5 MU-M BAND USING BOUND TO CONTINUUM STATE ABSORPTION IN INGAAS/INALAS MULTIQUANTUM WELL STRUCTURES [J].

HASNAIN, G ;

LEVINE, BF ;

SIVCO, DL ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1990, 56 (08) :770-772

[6] POLARIZATION INSENSITIVE SEMICONDUCTOR-LASER AMPLIFIERS WITH TENSILE STRAINED INGAASP/INGAASP MULTIPLE QUANTUM-WELL STRUCTURE [J].

JOMA, M ;

HORIKAWA, H ;

XU, CQ ;

YAMADA, K ;

KATOH, Y ;

KAMIJOH, T .

APPLIED PHYSICS LETTERS, 1993, 62 (02) :121-122

[7] INGAAS/INALAS BISTABLE MULTIPLE QUANTUM WELL LASERS WITH LARGE ON-OFF RATIO USING THE RESONANT TUNNELING EFFECT [J].

KAWAMURA, Y ;

WAKITA, K ;

MIKAMI, O .

APPLIED PHYSICS LETTERS, 1988, 53 (16) :1462-1464

[8] HIGH-SPEED AND LOW-DRIVING-VOLTAGE INGAAS/INALAS MULTIQUANTUM WELL OPTICAL MODULATORS [J].

KOTAKA, I ;

WAKITA, K ;

KAWANO, K ;

ASAI, M ;

NAGANUMA, M .

ELECTRONICS LETTERS, 1991, 27 (23) :2162-2163

[9] 1.55 MU-M POLARIZATION-INSENSITIVE HIGH-GAIN TENSILE-STRAINED-BARRIER MQW OPTICAL AMPLIFIER [J].

MAGARI, K ;

OKAMOTO, M ;

NOGUCHI, Y .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (11) :998-1000

[10] ELECTROOPTIC EFFECTS IN AN INGAAS/INALAS MULTIQUANTUM WELL STRUCTURE [J].

NISHIMURA, S ;

INOUE, H ;

SANO, H ;

ISHIDA, K .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (10) :1123-1126

← 1 2 →