COMPARISON OF 1/F NOISE IN IRRADIATED POWER MOSFETS MEASURED IN THE LINEAR AND SATURATION REGIONS

被引：13
作者：
AUGIER, P
TODSEN, JL
ZUPAC, D
SCHRIMPF, RD
GALLOWAY, KF
BABCOCK, JA
机构：
[1] Department of Electrical and Computer Engineering, University of Arizona, Tucson, AZ
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1992年 / 39卷 / 06期
关键词：
D O I：
10.1109/23.211398
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
1/f noise in n-channel and p-channel power MOSFETs is investigated as a function of total dose and annealing. All the devices used in this study are non-hardened commercial parts. The pre-irradiation noise dependence on the gate and drain biases is analyzed. A different evolution of the noise measured in the linear and saturation regions through irradiation and annealing is reported.
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页码：2012 / 2017
页数：6
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