COMPARISON OF 1/F NOISE IN IRRADIATED POWER MOSFETS MEASURED IN THE LINEAR AND SATURATION REGIONS

被引：13

作者：

AUGIER, P

TODSEN, JL

ZUPAC, D

SCHRIMPF, RD

GALLOWAY, KF

BABCOCK, JA

机构：

[1] Department of Electrical and Computer Engineering, University of Arizona, Tucson, AZ

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1992年 / 39卷 / 06期

关键词：

D O I：

10.1109/23.211398

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

1/f noise in n-channel and p-channel power MOSFETs is investigated as a function of total dose and annealing. All the devices used in this study are non-hardened commercial parts. The pre-irradiation noise dependence on the gate and drain biases is analyzed. A different evolution of the noise measured in the linear and saturation regions through irradiation and annealing is reported.

引用

页码：2012 / 2017

页数：6

共 10 条

[1] EFFECTS OF IONIZING-RADIATION ON THE NOISE PROPERTIES OF DMOS POWER TRANSISTORS
BABCOCK, JA
TITUS, JL
SCHRIMPF, RD
GALLOWAY, KF
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1991, 38 (06) : 1304 - 1309
[2] BLASQUEZ G, 1983, ORIGINS 1F NOISE MOS, P303
[3] LOW FREQUENCY NOISE IN MOS TRANSISTORS .I. THEORY
CHRISTEN.S
LUNDSTRO.I
SVENSSON, C
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (09) : 797 - &
[4] A SIMPLE-MODEL FOR SEPARATING INTERFACE AND OXIDE CHARGE EFFECTS IN MOS DEVICE CHARACTERISTICS
GALLOWAY, KF
GAITAN, M
RUSSELL, TJ
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) : 1497 - 1501
[5] MCWORTHER PJ, 1986, APPL PHYS LETT, V48, P133
[6] 1/F NOISE IN N-CHANNEL AND P-CHANNEL MOS DEVICES THROUGH IRRADIATION AND ANNEALING
MEISENHEIMER, TL
FLEETWOOD, DM
SHANEYFELT, MR
RIEWE, LC
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1991, 38 (06) : 1297 - 1303
[7] EFFECT OF RADIATION-INDUCED CHARGE ON 1/F NOISE IN MOS DEVICES
MEISENHEIMER, TL
FLEETWOOD, DM
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1990, 37 (06) : 1696 - 1702
[8] EVIDENCE OF SURFACE ORIGIN OF 1/F NOISE
SAH, CT
HIELSCHER, F
[J]. PHYSICAL REVIEW LETTERS, 1966, 17 (18) : 956 - +
[9] PHYSICAL BASIS FOR NONDESTRUCTIVE TESTS OF MOS RADIATION HARDNESS
SCOFIELD, JH
FLEETWOOD, DM
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1991, 38 (06) : 1567 - 1577
[10] CORRELATION BETWEEN PREIRRADIATION 1/F NOISE AND POSTIRRADIATION OXIDE-TRAPPED CHARGE IN MOS-TRANSISTORS
SCOFIELD, JH
DOERR, TP
FLEETWOOD, DM
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1989, 36 (06) : 1946 - 1953

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