EPITAXIAL-GROWTH OF CDXHG1-XTE BY PHOTO-MOVPE

被引：25

作者：

IRVINE, SJC ^{[1
]}

GIESS, J ^{[1
]}

MULLIN, JB ^{[1
]}

BLACKMORE, GW ^{[1
]}

DOSSER, OD ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

MATERIALS LETTERS | 1985年 / 3卷 / 7-8期

关键词：

D O I：

10.1016/0167-577X(85)90024-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：290 / 293

页数：4

共 12 条

[1] DOPING OF LPE LAYERS OF CDTE GROWN FROM TE SOLUTIONS [J].

ASTLES, M ;

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DEAN, PJ ;

WIGHT, DR ;

BLACKMORE, G .

JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (01) :167-189

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BOWERS, JE ;

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) :24-28

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GHANDHI, SK ;

BHAT, I .

APPLIED PHYSICS LETTERS, 1984, 44 (08) :779-781

[4] LIQUIDUS ISOTHERMS, SOLIDUS LINES AND LPE GROWTH IN THE TE-RICH CORNER OF THE HG-CD-TE SYSTEM [J].

HARMAN, TC .

JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (06) :945-961

[5] METAL-ORGANIC VAPOR-DEPOSITION OF CDTE AND HGCDTE FILMS [J].

HOKE, WE ;

TRACZEWSKI, R .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5087-5089

[6] A STUDY OF TRANSPORT AND PYROLYSIS IN THE GROWTH OF CDXHG1-XTE BY MOVPE [J].

IRVINE, SJC ;

TUNNICLIFFE, J ;

MULLIN, JB .

JOURNAL OF CRYSTAL GROWTH, 1983, 65 (1-3) :479-484

[7] PHOTOSENSITIZATION - A STIMULANT FOR THE LOW-TEMPERATURE GROWTH OF EPITAXIAL HGTE [J].

IRVINE, SJC ;

MULLIN, JB ;

TUNNICLIFFE, J .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :188-193

[8] THE GROWTH BY MOVPE AND CHARACTERIZATION OF CDXHG1-XTE [J].

IRVINE, SJC ;

MULLIN, JB .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :107-115

[9]

IRVINE SJC, 1984, P MRS S LASER CONTRO

[10] THE GROWTH OF CDXHG1-XTE USING ORGANOMETALLICS [J].

MULLIN, JB ;

IRVINE, SJC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01) :178-181

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