PHOTOACOUSTIC MEASUREMENTS OF DOPED SILICON-WAFERS

被引：7
|
作者：
AMATO, G [1 ]
BENEDETTO, G [1 ]
SPAGNOLO, R [1 ]
TURNATURI, M [1 ]
机构：
[1] IRCI,TURIN,ITALY
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1989年 / 114卷 / 02期
关键词：
D O I：
10.1002/pssa.2211140212
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：519 / 523
页数：5
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