ELECTRON-MICROSCOPY OF SILICON MONOPHOSPHIDE PRECIPITATES IN P-DIFFUSED SILICON

被引：32

作者：

SERVIDORI, M ^{[1
]}

ARMIGLIATO, A ^{[1
]}

机构：

[1] CNR,LAB LAMEL,VIA CASTAGNOLI 1,BOLOGNA,ITALY

来源：

JOURNAL OF MATERIALS SCIENCE | 1975年 / 10卷 / 02期

关键词：

D O I：

10.1007/BF00540355

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：306 / 313

页数：8

共 10 条

[1] CRYSTALLOGRAPHY OF SIP AND SIAS SINGLE CRYSTALS AND OF SIP PRECIPITATES IN SI [J].

BECK, CG ;

STICKLER, R .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (13) :4683-&

[2]

GHEZZI C, 1974, J MATER SCI, V9, P1797, DOI 10.1007/BF00541748

[3]

GLAZOV VM, 1968, PHYSICO CHEMICAL PRI, P141

[4] DIFFUSION-INDUCED DEFECTS IN SILICON .2. [J].

LEVINE, E ;

WASHBURN, J ;

THOMAS, G .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (01) :87-&

[5] NEW SIMPLE METHODS FOR JET CUTTING AND FOR SIMULTANEOUS THINNING AND CUTTING OF DISK SPECIMENS FOR ELECTRON-MICROSCOPY [J].

MERLI, PG ;

VALDRE, U .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1972, 5 (09) :933-&

[6]

NEGRINI P, TO BE PUBLISHED

[7]

Prussin S., 1961, J APPL PHYS, V32, P1876, DOI [10.1063/1.1728256, DOI 10.1063/1.1728256]

[8] SILICON PHOSPHIDE PRECIPITATES IN DIFFUSED SILICON [J].

SCHMIDT, PF ;

STICKLER, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (10) :1188-1189

[9] X-RAY STRESS TOPOGRAPHY OF THIN FILMS ON GERMANIUM AND SILICON [J].

SCHWUTTK.GH ;

HOWARD, JK .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) :1581-&

[10]

WADSTEN T, 1973, 7 U STOCKH CHEM COMM, P1

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