MBE growth and characterization of high purity GaAs/AlGaAs on the (110) surface of GaAs

被引：4

作者：

Sorensen, CB ^{[1
]}

Gislason, H ^{[1
]}

Birkedal, D ^{[1
]}

Hvam, JM ^{[1
]}

机构：

[1] TECH UNIV DENMARK,MIKROELEKTRON CTR,DK-2800 LYNGBY,DENMARK

来源：

MICROELECTRONICS JOURNAL | 1995年 / 26卷 / 08期

关键词：

D O I：

10.1016/0026-2692(95)00035-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An improved quality of (110) GaAs has been grown by molecular beam epitaxy using As-2 in lieu of As-4. The most pronounced effect of using As-2 is a higher doping efficiency of Si delta-doped GaAs layers, resulting in a mobility of the (110) layers, comparable to the reference (100) samples. The high quality of the (110) GaAs was confirmed by low temperature photoluminescence. The spectrum of the GaAs layer shows a single dominant free exciton line with a linewidth of 1.0 meV.

引用

页码：767 / 773

页数：7

共 12 条

[1]

ADACHI S, 1993, PROPERTIES ALUMINIUM, P245

[2] DEVICE QUALITY GROWTH AND CHARACTERIZATION OF (110) GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

ALLEN, LTP ;

WEBER, ER ;

WASHBURN, J ;

PAO, YC .

APPLIED PHYSICS LETTERS, 1987, 51 (09) :670-672

[3] AUTOCOMPENSATION IN MOLECULAR-BEAM EPITAXIAL GALLIUM-ARSENIDE - THE (110) ORIENTATION [J].

BALLINGALL, JM ;

WOOD, CEC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :162-165

[4] CRYSTAL ORIENTATION DEPENDENCE OF SILICON AUTOCOMPENSATION IN MOLECULAR-BEAM EPITAXIAL GALLIUM-ARSENIDE [J].

BALLINGALL, JM ;

WOOD, CEC .

APPLIED PHYSICS LETTERS, 1982, 41 (10) :947-949

[5] THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS [J].

CHAI, YG ;

WOOD, CEC ;

CHOW, R .

APPLIED PHYSICS LETTERS, 1981, 39 (10) :800-803

[6] OPTICAL SPECTROSCOPY OF A GAAS/ALGAAS QUANTUM-WIRE STRUCTURE USING NEAR-FIELD SCANNING OPTICAL MICROSCOPY [J].

GROBER, RD ;

HARRIS, TD ;

TRAUTMAN, JK ;

BETZIG, E ;

WEGSCHEIDER, W ;

PFEIFFER, L ;

WEST, K .

APPLIED PHYSICS LETTERS, 1994, 64 (11) :1421-1423

[7]

NOTZEL R, 1992, APPL PHYS LETT, V60, P1615, DOI 10.1063/1.107218

[8] QUANTUM WIRE STRUCTURES BY MBE OVERGROWTH ON A CLEAVED EDGE [J].

PFEIFFER, L ;

STORMER, HL ;

WEST, K ;

BALDWIN, KW .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :333-338

[9] ELECTRON-MOBILITY ENHANCEMENT AND ELECTRON-CONCENTRATION ENHANCEMENT IN DELTA-DOPED N-GAAS AT T=300K [J].

SCHUBERT, EF ;

CUNNINGHAM, JE ;

TSANG, WT .

SOLID STATE COMMUNICATIONS, 1987, 63 (07) :591-594

[10] SI DELTA-DOPING OF (011)-ORIENTED GAAS AND ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

SCHUBERT, EF ;

PFEIFFER, L ;

WEST, KW ;

LUFTMAN, HS ;

ZYDZIK, GJ .

APPLIED PHYSICS LETTERS, 1994, 64 (17) :2238-2240

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