PROPERTIES OF ZNS THIN-FILMS PREPARED BY 248-NM PULSED-LASER DEPOSITION

被引：50

作者：

MCLAUGHLIN, M

SAKEEK, HF

MAGUIRE, P

GRAHAM, WG

MOLLOY, J

MORROW, T

LAVERTY, S

ANDERSON, J

机构：

[1] QUEENS UNIV BELFAST,DEPT PURE & APPL PHYS,BELFAST BT7 1NN,ANTRIM,NORTH IRELAND

[2] UNIV ULSTER,DEPT ELECT & ELECTR ENGN,NETOWNABBEY BT37 0QB,ANTRIM,NORTH IRELAND

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 14期

关键词：

D O I：

10.1063/1.110656

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pulsed laser deposition (PLD) from a hot pressed manganese doped ZnS target using a KrF laser, has produced a high rate deposition method for growing luminescent thin films. Good stoichiometric quality and typical luminescent crystal structures have been observed with a predominant hexagonal phase and little evidence of the cubic phase. The luminescent characteristics were determined by cathodoluminescence and photoluminescence excitation and stable electroluminescence was observed under pulsed dc conditions with a minimum brightness of 150 cd/m2. PLD film characteristics are compared with those observed in radio-frequency sputtered samples.

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页码：1865 / 1867

页数：3

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