HIGHLY SUPPRESSED BORON PENETRATION IN NO-NITRIDED SIO2 FOR P(+)-POLYSILICON GATED MOS DEVICE APPLICATIONS

被引：42

作者：

HAN, LK

WRISTERS, D

YAN, J

BHAT, M

KWONG, DL

机构：

[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas, Austin

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 07期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/55.388720

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we demonstrate the superior diffusion barrier properties of NO-nitrided SiO2 in suppressing boron penetration for p(+)-polysilicon gated MOS devices. Boron penetration effects have been studied in terms of flatband voltage shift, decrease in inversion capacitance (due to polysilicon depletion effect), impact on interface state density, and charge-to-breakdown, Results show that NO-nitrided SiO2, as compared to conventional thermal SiO2, exhibit much higher resistance to boron penetration, and therefore, are very attractive for surface channel PMOS technology.

引用

页码：319 / 321

页数：3

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