DAMAGE AND ALUMINUM DISTRIBUTIONS IN SIC DURING ION-IMPLANTATION AND ANNEALING

Damage buildup in SiC during ion implantation of Al+ with an energy of 90 keV and fluences of 10(13)-10(16) ions/cm2 at room temperature was studied. It was observed that the surface concentration of displaced host atoms and chi(min) increase rapidly in the fluence range of 3 x 10(13)-10(15) cm-2 and change weakly outside this range. The amorphization of the surface layer occurred at a fluence of phi(c) almost-equal-to 8 x 10(14) cm-2. The thickness of the amorphous layer as well as the depth and the width of the Al-atoms profile exceed the values calculated for an amorphous target. The possibility of recrystallizing the damaged layer depended on the ion fluence. The precipitation of Al-atoms at structural defects was observed.