ULTRAHIGH-VOLTAGE HIGH-CURRENT GATE TURN-OFF THYRISTORS

被引：9

作者：

YATSUO, T

NAGANO, T

FUKUI, H

OKAMURA, M

SAKURADA, S

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 12期

关键词：

D O I：

10.1109/T-ED.1984.21771

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1681 / 1686

页数：6

共 11 条

[1] 2500-V 600-A GATE TURN-OFF THYRISTOR (GTO) [J].

AZUMA, M ;

KURATA, M ;

TAKIGAMI, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (03) :270-274

[2]

Kanzaki T., 1982, International Semiconductor Power Converter Conference, P145

[3]

Nagano T., 1978, Industry Applications Society. IEE-IAS 1978 Annual Meeting, P1003

[4]

Nagano T., 1982, IEEE Power Electronics Specialists Conference. PESC '82 Record, P383

[5]

NAGANO T, 1981, IEEE C REC IND APPLI, P750

[6]

Ohashi H., 1981, International Electron Devices Meeting, P414

[7]

OHTA M, 1982, IEEE IAS 82 ANN M RE, P239

[8] NUMERICAL-ANALYSIS OF TURN-OFF CHARACTERISTICS FOR A GATE TURN-OFF THYRISTOR WITH A SHORTED ANODE EMITTER [J].

SHIMIZU, Y ;

NAITO, M ;

ODAMURA, M ;

TERASAWA, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (09) :1043-1047

[9]

Tada A., 1982, International Semiconductor Power Converter Conference, P66

[10]

UEDA A, 1982, IEEE IAS ANN, P645

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