DETECTORS FOR FIBER-OPTIC COMMUNICATION

被引：0

作者：

LUCAS, AD ^{[1
]}

机构：

[1] EMI ELECT LTD,CENT RES LABS,HAYES UB3 1HH,MIDDLESEX,ENGLAND

来源：

PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON | 1976年 / 123卷 / 06期

关键词：

D O I：

10.1049/piee.1976.0138

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：623 / 626

页数：4

共 12 条

[1] AVALANCHE PHOTODIODES WITH A GAIN-BANDWIDTH PRODUCT OF MORE THAN GHZ-200 [J].

BERCHTOLD, K ;

KRUMPHOLZ, O ;

SURI, J .

APPLIED PHYSICS LETTERS, 1975, 26 (10) :585-587

[2]

EYTUHDV V, 1975, IEEE T MTT, V23, P44

[3] DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS [J].

GARTNER, WW .

PHYSICAL REVIEW, 1959, 116 (01) :84-87

[4] AVALANCHE BREAKDOWN IN READ DIODES AND PIN DIODES [J].

GIBBONS, G ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1968, 11 (02) :225-+

[5] THEORETICAL ASSESSMENT OF LOW AND HIGH BANDWIDTH GALLIUM-ARSENIDE, GERMANIUM AND SILICON AVALANCHE PHOTODIODES FOR OPTICAL COMMUNICATION SYSTEMS [J].

GRIERSON, JR ;

OHARA, S .

SOLID-STATE ELECTRONICS, 1975, 18 (11) :1003-1011

[6] EPITAXIAL SILICON AVALANCHE PHOTODIODE [J].

LUCAS, AD .

OPTO-ELECTRONICS, 1974, 6 (02) :153-160

[7]

NAQVI GM, 1973, SOL ST ELEC, V16, P19

[8] STABILIZATION OF OPERATING POINT OF AN AVALANCHE PHOTODETECTOR [J].

RAINES, JA ;

PARKER, JT ;

MONAHAN, BC .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1970, 3 (08) :621-+

[9] MONOLITHIC INTEGRATED INXGA1-XAS SCHOTTKY-BARRIER WAVEGUIDE PHOTODETECTOR [J].

STILLMAN, GE ;

WOLFE, CM ;

MELNGAILIS, I .

APPLIED PHYSICS LETTERS, 1974, 25 (01) :36-38

[10] SCHOTTKY-BARRIER IN XGA1-X AS ALLOY AVALANCHE PHOTODIODES FOR 1.06 MUM [J].

STILLMAN, GE ;

WOLFE, CM ;

FOYT, AG ;

LINDLEY, WT .

APPLIED PHYSICS LETTERS, 1974, 24 (01) :8-10

← 1 2 →