A susceptor with a -shaped slot in a vertical MOCVD reactor by induction heating

被引：0

作者：

Li Zhiming ^{[1
]}

Li Hailing ^{[2
]}

Gan Xiaobing ^{[3
]}

Jiang Haiying ^{[1
]}

Li Jinping ^{[1
]}

Fu Xiaoqian ^{[1
]}

Han Yanbin ^{[1
]}

Xia Yingjie ^{[1
]}

Yin Jianqin ^{[1
]}

Huang Yimei ^{[1
]}

Hu Shigang ^{[4
]}

机构：

[1] Univ Jinan, Sch Informat Sci & Engn, Shandong Prov Key Lab Network Based Intelligent C, Jinan 250022, Shandong, Peoples R China

[2] Shandong Coll Elect Technol, Jinan 250022, Shandong, Peoples R China

[3] Shenzhen Univ, Coll Management, Shenzhen 518060, Peoples R China

[4] Hunan Univ Sci & Technol, Sch Informat & Elect Engn, Xiangtan 411201, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2014年 / 35卷 / 09期

基金：

中国国家自然科学基金;

关键词：

induction heat; MOCVD; finite element analysis; temperature field;

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

By using the numerical simulation for the temperature field in the metal organic vapor deposition (MOCVD) reactor by induction heating, it is found that the temperature distribution in the conventional cylindershaped susceptor is nonuniform due to the skin effect of the induced current, which makes the temperature distribution of the wafer nonuniform. Therefore, a novel susceptor with a <^>-shaped slot is proposed. This slot changes the mode and the rate of the heat transfer in the susceptor, which improves the uniformity of the temperature distribution in the wafer. By using the finite element method (FEM), the susceptor with this structure for heating a wafer of four inches in diameter is optimized. It is observed that the optimized susceptor with the <^>-shaped slot makes the uniformity of the temperature distribution in the wafer improve by more than 85%, and a good uniformity of temperature distributions is kept under different wafer temperatures, which may be beneficial to the film growth.

引用

页数：5

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