PERFORMANCE OF INVERTED STRUCTURE MODULATION DOPED SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS

被引：8

作者：

THORNE, RE ^{[1
]}

FISCHER, R ^{[1
]}

SU, SL ^{[1
]}

KOPP, W ^{[1
]}

DRUMMOND, TJ ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 04期

关键词：

D O I：

10.1143/JJAP.21.L223

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L223 / L224

页数：2

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