NEW NEGATIVE TONE RESISTS FOR SUBHALF MICRON LITHOGRAPHY

被引：4
|
作者：
SACHDEV, H
KWONG, R
LINEHAN, L
CONLEY, W
MIURA, S
SMITH, R
KATNANI, A
机构：
[1] IBM Microelectronics Division, NY 12533
来源：
MICROELECTRONIC ENGINEERING | 1994年 / 23卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(94)90165-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
New crosslinking type resist systems are described which use benzylic carbocation precursors carrying phenolic hydroxy group. The special feature of the new resists is the versatility of applications, ease of synthesis, high sensitivity, high contrast and a large process window. One such resist system has been used success fully in the back-end-of-the-line personalization for manufacturing advanced bipolar devices which required an exceptionally large process window. The new resist system is a promising candidate for surface imaging as well as for I-line, DUV and X-Ray applications.
引用
收藏
页码：321 / 326
页数：6
相关论文
共 50 条
  • [31] PHASE-SHIFTING MASK AND TOP IMAGING RESIST FOR SUBHALF MICRON DEEP-UV LITHOGRAPHY
    JOUBERT, O
    DALZOTTO, B
    PICARD, B
    SAHM, A
    TEDESCO, S
    MICROELECTRONIC ENGINEERING, 1992, 17 (1-4) : 75 - 78
  • [32] SILICON-CONTAINING RESISTS WITH POSITIVE AND NEGATIVE TONE
    ROUSSEEUW, BAC
    PUYENBROEK, R
    VANDERDRIFT, E
    VANDEGRAMPEL, JC
    MICROELECTRONIC ENGINEERING, 1995, 27 (1-4) : 375 - 379
  • [33] Development of New Positive-Tone Molecular Resists Based on Fullerene Derivatives for Extreme Ultraviolet Lithography
    Oizumi, Hiroaki
    Tanaka, Katsutomo
    Kawakami, Kiminori
    Itani, Toshiro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (06) : 06GF041 - 06GF046
  • [34] Development of new positive-tone molecular resists based on fullerene derivatives for extreme ultraviolet lithography
    Semiconductor Leading Edge Technologies, Inc. , 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
    不详
    不详
    Jpn. J. Appl. Phys., 6 PART 2 (06GF041-06GF046):
  • [35] Sub-20nm Lithography Negative Tone Chemically Amplified Resists using Cross-Linker Additives
    Kulshreshtha, Prashant K.
    Maruyama, Ken
    Kiani, Sara
    Dhuey, Scott
    Perera, Pradeep
    Blackwell, James
    Olynick, Deirdre
    Ashby, Paul D.
    ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXX, 2013, 8682
  • [36] FOCAL PLANE DETERMINATION FOR SUBHALF MICRON OPTICAL STEPPERS
    STALNAKER, S
    LUEHRMANN, P
    WAELPOEL, J
    SAGER, C
    REYNOLDS, P
    MICROELECTRONIC ENGINEERING, 1993, 21 (1-4) : 33 - 36
  • [37] Experiments for 3-D structuring of thick resists by gray tone lithography
    Dumbravescu, N
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2000, 3 (5-6) : 569 - 573
  • [38] Aqueous and Solvent Developed Negative-Tone Molecular Resists
    Lawson, Richard A.
    Cheng, Jing
    Noga, David E.
    Younkin, Todd R.
    Tolbert, Laren M.
    Henderson, Clifford L.
    ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXVII, PTS 1 AND 2, 2010, 7639
  • [39] Negative-Tone Molecular Resists Based on Cationic Polymerization
    Lawson, Richard A.
    Tolbert, Laren M.
    Younkin, Todd R.
    Henderson, Clifford L.
    ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXVI, 2009, 7273
  • [40] POSITIVE AND NEGATIVE CHEMICALLY AMPLIFIED RESISTS FOR EXCIMER LASER LITHOGRAPHY
    HAYASHI, N
    UENO, T
    SHIRAISHI, H
    SCHLEGEL, L
    IWAYANAGI, T
    DENKI KAGAKU, 1991, 59 (12): : 1026 - 1030
12345