NEW NEGATIVE TONE RESISTS FOR SUBHALF MICRON LITHOGRAPHY

被引：4
作者：
SACHDEV, H
KWONG, R
LINEHAN, L
CONLEY, W
MIURA, S
SMITH, R
KATNANI, A
机构：
[1] IBM Microelectronics Division, NY 12533
来源：
MICROELECTRONIC ENGINEERING | 1994年 / 23卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(94)90165-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
New crosslinking type resist systems are described which use benzylic carbocation precursors carrying phenolic hydroxy group. The special feature of the new resists is the versatility of applications, ease of synthesis, high sensitivity, high contrast and a large process window. One such resist system has been used success fully in the back-end-of-the-line personalization for manufacturing advanced bipolar devices which required an exceptionally large process window. The new resist system is a promising candidate for surface imaging as well as for I-line, DUV and X-Ray applications.
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收藏
页码：321 / 326
页数：6
相关论文
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