ELECTRONIC INTERACTION AND CLUSTERING OF IRON ON C-60 ON GAAS(110)

被引：11
作者：
BIERMANN, M
KESSLER, B
KRUMMACHER, S
EBERHARDT, W
机构：
[1] Forschungszentrum Jülich GmbH, Institut für Festkörperforschung
来源：
SOLID STATE COMMUNICATIONS | 1995年 / 95卷 / 01期
关键词：
FULLERENES; NANOSTRUCTURES; DIELECTRONIC RESPONSE; ELECTRONIC STATES (LOCALIZED); PHOTOELECTRON SPECTROSCOPIES;
D O I：
10.1016/0038-1098(95)00205-7
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
C-60 layers deposited on GaAs(110) and iron deposited on C-60 were studied by photoelectron spectroscopy using He-I and Al-K alpha radiation. The spectra demonstrate no hybridisation between the electronic states of GaAs(110) and C-60. Thus GaAs(110) is a suitable substrate to grow smooth layers of C-60. Fe does not grow in layers on C-60, but instead forms clusters. The spectra also show evidence for hybridisation between the electronic levels of Fe and C-60.
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页码：1 / 5
页数：5
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