(INAS)1(GAAS)1 LAYERED CRYSTAL GROWN BY MOCVD

被引：79

作者：

FUKUI, T

SAITO, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 08期

关键词：

D O I：

10.1143/JJAP.23.L521

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L521 / L523

页数：3

共 8 条

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[7] X-RAY-DIFFRACTION STUDY OF A ONE-DIMENSIONAL GAAS-ALAS SUPERLATTICE [J].

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[8] A NEW HIGH-ELECTRON MOBILITY MONOLAYER SUPERLATTICE [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (11) :L680-L682

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