LUMINESCENCE IN HIGHLY CONDUCTIVE N-TYPE ZNSE

被引:122
作者
BOULEY, JC [1 ]
BLANCONNIER, P [1 ]
HERMAN, A [1 ]
GED, P [1 ]
HENOC, P [1 ]
NOBLANC, JP [1 ]
机构
[1] CTR NATL ETUD TELECOMMUN,92220 BAGNEUX,FRANCE
关键词
D O I
10.1063/1.322266
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3549 / 3555
页数:7
相关论文
共 17 条
[2]  
AVEN M, 1965, PHYS REV, V137, P228
[3]   EPITAXIC GROWTH OF COMPOUNDS II-VI IN VAPOR-PHASE [J].
BLANCONNIER, P ;
HENOC, P .
JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) :218-+
[4]  
BOULEY JC, 1974, EUROPEAN SOLID STATE
[5]  
Chatterjee P. K., 1973, Journal of Luminescence, V8, P176, DOI 10.1016/0022-2313(73)90103-8
[6]  
CURIE D, 1967, PHYSICS CHEMISTRY 2
[7]  
DEAN PJ, 1970, PHYS REV B, V178, P4959
[8]  
ERA K, 1970, J LUMIN, V1, P514
[9]   EXCITONS AND ABSORPTION EDGE IN ZNSE [J].
HITE, GE ;
MARPLE, DTF ;
AVEN, M ;
SEGALL, B .
PHYSICAL REVIEW, 1967, 156 (03) :850-&
[10]  
IBUKI S, 1967, 2 6 SEMICONDUCTOR CO, P1140